Si7888DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7888DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.2
I_D = 250 mA
40
- 0.0
30
- 0.2
Single Pulse Power
- 0.4
20
- 0.6
10
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
10
I_D(on)
1 ^Limited
0.1
T_C = 25_C
Single Pulse
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 55_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 71876
S-31727—Rev. B, 18-Aug-03