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Si7888DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
Si7888DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 12.4 A
VGS = 4.5 V, ID = 9.6 A
VDS = 15 V, ID = 12.4 A
IS = 2.6 A, VGS = 0 V
0.80
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 5.0 V, ID = 12.4 A
0.2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.6 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ Max Unit
2
V
"100
nA
1
mA
5
A
0.010
0.012
W
0.016
0.020
27
S
0.75
1.2
V
8.7
10.5
2.4
nC
3.5
1
1.5
W
10
20
11
20
24
50
ns
10
20
50
75
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
40
VGS = 10 thru 4 V
30
20
3V
10
2V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
50
40
30
20
TC = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
Document Number: 71876
S-31727—Rev. B, 18-Aug-03