Si7888DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7888DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
1200
Capacitance
0.020
0.015
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
1000
800
600
400
200
C_iss
C_rss
C_oss
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 12.4 A
6
4
2
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 12.4 A
1.4
1.2
1.0
0.8
0
0 2 4 6 8 10 12 14 16
Q_g - Total Gate Charge (nC)
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.05
T_J = 150_C
10
T_J = 25_C
0.04
0.03
I_D = 12.4 A
0.02
0.01
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71876
S-31727—Rev. B, 18-Aug-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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