SUU15N15-95 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175_C MOSFET

SUU15N15-95
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.8
100
V_GS = 10 V
2.4
I_D = 15 A
Source-Drain Diode Forward Voltage
2.0
1.6
T_J = 150_C
10
1.2
0.8
T_J = 25_C
0.4
0.0
--50 --25 0
25 50 75 100 125 150 175
T_J -- Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
20
1
0
0.3
0.6
0.9
1.2
V_SD -- Source-to-Drain Voltage (V)
Safe Operating Area
100
10 ms
15
Limited by r_DS(on)
10
100 ms
10
1
1 ms
5
10 ms
T_C = 25_C
100 ms
Single Pulse
1 s, dc
0
0
25 50 75 100 125 150 175
T_C -- Case Temperature (_C)
0.1
0.1
1
10
100
V_DS -- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1000
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^--4
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4
10^--3
10^--2
10^--1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71670
S-31724—Rev. B, 18-Aug-03