SUU15N15-95 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175_C MOSFET

SUU15N15-95
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.095 @ V_GS = 10 V
150
0.100 @ V_GS = 6 V
TO-251
I_D (A)
15
15
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D 100% R_g Tested
APPLICATIONS
D Primary Side Switch
D
Drain Connected to Tab
GDS
Top View
Ordering Information: SUU15N15-95
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle ≤ 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
150
20
15
8.7
25
15
15
11.3
62^b
2.7^a
--55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t ≤ 10 sec
Steady State
Document Number: 71670
S-31724—Rev. B, 18-Aug-03
Symbol
R_thJA
R_thJC
Typical
16
45
2
Maximum
20
55
2.4
Unit
_C/W
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