SUU15N15-95 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175_C MOSFET

SUU15N15-95
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = 120 V, V_GS = 0 V
V_DS = 120 V, V_GS = 0 V, T_J = 125_C
V_DS = 120 V, V_GS = 0 V, T_J = 175_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 10 V, I_D = 15 A, T_J = 125_C
V_GS = 10 V, I_D = 15 A, T_J = 175_C
V_GS = 6 V, I_D = 10 A
V_DS = 15 V, I_D = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 75 V, V_GS = 10 V, I_D = 15 A
V_DD = 75 V, R_L = 5 Ω
I_D ≅ 15 A, V_GEN = 10 V, R_g = 2.5 Ω
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = 15 A, V_GS = 0 V
I_F = 15 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
c. Independent of operating temperature.
Min Typ^a Max Unit
150
V
2
100
nA
1
50
mA
250
25
A
0.077
0.095
0.190
Ω
0.250
0.081
0.100
25
S
900
115
pF
70
20
25
5.5
nC
7
1
3.6
Ω
8
12
35
55
ns
17
25
30
45
25
A
0.9
1.5
V
55
85
ns
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2
Document Number: 71670
S-31724—Rev. B, 18-Aug-03