SUU09N10-76P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUU09N10-76P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
3.9
3.5
T_J = 150 °C
10
3.1
I_D = 250 μA
2.7
1
T_J = 25 °C
2.3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
800
600
C_iss
400
200
C_oss
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.1
I_D = 6.1 A
1.7
V_GS = 10 V
V_GS = 6 V
1.3
122
I_D = 250 μA
117
112
107
102
97
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
16
12
8
0.9
4
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
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Document Number: 63456
4
S11-2184-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000