SUU09N10-76P Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUU09N10-76P
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
100
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
2.5
V
4
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 250
nA
V_DS = 100 V, V_GS = 0 V
1
Zero Gate Voltage Drain Current
I_DSS
V_DS = 100 V, V_GS = 0 V, T_J = 125 °C
50
µA
V_DS = 100 V, V_GS = 0 V, T_J = 150 °C
250
On-State Drain Current^a
I_D(on)
V_DS  10 V, V_GS = 10 V
15
A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 6.1 A
V_GS = 6 V, I_D = 5.4 A
0.063
0.076

0.080
0.096
Forward Transconductance^a
g_fs
V_DS = - 20 V, I_D = 6.1 A
13
S
Dynamic^b
Input Capacitance
C_iss
505
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 50 V, f = 1 MHz
71
pF
Reverse Transfer Capacitance
C_rss
35
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Q_g
V_DS = 50 V, V_GS = 10 V, I_D = 6.1 A
Q_gs
V_DS = 50 V, V_GS = 4.5 V, I_D = 6.1 A
Q_gd
12.7
19.1
8.5
12.8
nC
3.6
4
Gate Resistance
R_g
f = 1 MHz
0.2
0.9
1.8

Turn-On Delay Time^c
t_d(on)
7
14
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = 50 V, R_L = 10.2 
I_D  4.9 A, V_GEN = 10 V, R_g = 1 
11
20
ns
11
20
Fall Time^c
t_f
6
12
Drain-Source Body Diode Ratings and Characteristics T_C = 25 °C^b
Continuous Current
I_S
Pulsed Current
I_SM
9
A
20
Forward Voltage^a
V_SD
I_F = 4.9 A, V_GS = 0 V
0.82
1.5
V
Reverse Recovery Time
t_rr
36
53
ns
Peak Reverse Recovery Current
I_RM(REC)
I_F = 4.9 A, dI/dt = 100 A/µs
2.7
4.1
A
Reverse Recovery Charge
Q_rr
46
69
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63456
2
S11-2184-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000