SUU09N10-76P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
0.126
SUU09N10-76P
Vishay Siliconix
V_GS = 10 V thru 6 V
15
0.102
V_GS = 6 V
10
0.078
V_GS = 10 V
5
0.054
V_GS = 5 V
0
0
1.5
1.2
0.9
0.6
0.3
0
0
20
15
10
5
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1.5
3
4.5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
0.030
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0.20
0.15
0.10
0.05
I_D = 6.1A
T_J = 125 °C
T_J = 25 °C
0
4
6
7
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 6.1 A
8
V_DS = 50 V
V_DS = 25 V
6
4
V_DS = 80 V
2
0
0
2
4
6
8
10
I_D - Drain Current (A)
Transconductance
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 63456
www.vishay.com
S11-2184-Rev. A, 07-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000