SUP90N10-09 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

SUP90N10-09
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 30 A
2.0
Source-Drain Diode Forward Voltage
100
1.5
10
T_J = 150_C
T_J = 25_C
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
I_AV (A) @ T_A = 25_C
10
1 ^{IAV (A) @ TA = 150_C}
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
125
120
I_D = 10 mA
115
110
105
100
95
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 72075
S-22125—Rev. A, 25-Nov-02