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SUP90N10-09 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
SUP90N10-09
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125_C
VDS = 80 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 85 A
VDD = 50 V, RL = 0.6 W
ID ^ 85 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
100
V
2
4
"100
nA
1
mA
50
250
mA
120
A
0.0075 0.0094
0.017
W
0.024
25
S
8700
740
pF
450
140
210
41
nC
41
20
30
110
170
ns
65
100
100
150
90
A
240
1.0
1.5
V
70
140
ns
5.5
10
A
0.19
0.35
mC
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Document Number: 72075
S-22125—Rev. A, 25-Nov-02