SUP90N10-09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

New Product
SUP90N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
V_GS = 10 thru 6 V
200
200
Transfer Characteristics
150
100
50
0
0
250
200
150
100
5V
4V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Transconductance
T_C = -55_C
25_C
125_C
150
100
50
0
0
0.015
T_C = 125_C
25_C
-55 _C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.012
0.009
V_GS = 10 V
0.006
50
0.003
0
0
12000
15
30
45
60
75
90
I_D - Drain Current (A)
Capacitance
10000
C_iss
8000
6000
4000
2000
0
0
C_rss
C_oss
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Document Number: 72075
S-22125—Rev. A, 25-Nov-02
0.000
0
20
20
40
60
80
100 120
I_D - Drain Current (A)
Gate Charge
16
V_DS = 50 V
I_D = 85 A
12
8
4
0
0
50
100
150
200
250
Q_g - Total Gate Charge (nC)
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