SUP75N05-07 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

SUP/SUB75N05-07
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 75 A
2.0
Source-Drain Diode Forward Voltage
T_J = 150_C
1.5
T_J = 25_C
10
1.0
0.5
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
300
100
I_AV (A) @ T_J = 25_C
10
I_AV (A) @ T_J = 150_C
1
0.0001
0.001
0.01
0.1
1
t_in (Sec)
Drain-Source Breakdown vs.
Junction Temperature
80
70
60
50
40
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70871
S-60952—Rev. A, 19-Apr-99