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SUP75N05-07 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET
New Product
SUP/SUB75N05-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
200
VGS = 5 thru 10 V
200
160
Transfer Characteristics
150
120
100
50
0
0
210
180
150
120
90
60
30
0
0
10000
8000
6000
4V
2, 3 V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
TC = –55_C
25_C
125_C
20
40
60
80
100
VGS – Gate-to-Source Voltage (V)
Capacitance
Ciss
80
40
0
0
0.010
0.008
0.006
TC = 125_C
25_C
–55_C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0.004
0.002
0
0
20
40
60
80
100
ID – Drain Current (A)
Gate Charge
10
8
VGS = 30 V
ID = 75 A
6
4000
2000
Crss
Coss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70871
S-60952—Rev. A, 19-Apr-99
4
2
0
0
20 40 60 80 100 120 140
Qg – Total Gate Charge (nC)
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