SUP75N05-07 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

New Product
SUP/SUB75N05-07
Vishay Siliconix
N-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
55
r_DS(on) (W)
0.007 @ V_GS = 10 V
0.009 @ V_GS = 4.5 V
TO-220AB
DRAIN connected to TAB
GD S
Top View
SUP75N05-07
I_D (A)
"75 ^a
TO-263
G DS
Top View
SUB75N05-07
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
55
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Avalanche Current
Repetitive Avalanche Energy^b
L = 0.1 mH
Maximum Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^d
Operating Junction and Storage Temperature Range
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
"75^a
"60
"240
"60
180
158^c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)^d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70871
S-60952—Rev. A, 19-Apr-99
Symbol
R_thJA
R_thJC
Limit
40
62.5
0.95
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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