SUP70N03-09BP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

SUP/SUB70N03-09BP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
I_D = 30 A
1.6
1.2
10
0.8
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.4
0.0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Drain-Source Voltage Breakdown
vs. Junction Temperature
45
I_D = 250 mA
40
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
35
30
25
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
www.vishay.com
4
Document Number: 71229
S-20102—Rev. B, 11-Mar-02