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| SUP70N03-09BP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized | |||
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SUP/SUB70N03-09BP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, IDS = 250 mA
0.8
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
ID(on)
rDS(on)
gfs
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 24 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
70
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
20
Dynamicb
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Gate Resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 70 A
VDD = 15 V, RL = 0.21 W
ID ] 70 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IS
ISM
VSD
IF = 70 A, VGS = 0 V
trr
IF = 70 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
V
2.0
"100
nA
1
50
mA
150
A
0.007 0.009
0.0135
W
0.017
0.010 0.013
45
S
1500
530
pF
240
15.5
19
5
nC
6
10
18
8
15
ns
25
45
9
16
2
W
70
A
200
1.1
1.5
V
30
60
ns
www.vishay.com
2
Document Number: 71229
S-20102âRev. B, 11-Mar-02
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