SUP70N03-09BP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized

New Product
SUP/SUB70N03-09BP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
200
V_GS = 10 thru 6 V
160
5V
150
120
80
40
0
0
4V
3V
1, 2 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
100
50
0
0
Transconductance
100
T_C = –55_C
80
25_C
60
125_C
40
0.025
0.020
0.015
0.010
Transfer Characteristics
T_C = –55_C
25_C
125_C
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
20
0.005
0
0
2400
20
40
60
80
100 120
I_D – Drain Current (A)
Capacitance
2000
C_iss
1600
1200
800
C_rss
400
C_oss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
0.000
0
10
20
40
60
80
100 120
I_D – Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 70 A
6
4
2
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
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