SUP65P06-20 Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET

SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
Source-Drain Diode Forward Voltage
T_J = 150_C
1.5
T_J = 25_C
10
1.0
0.5
0.0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
80
60
40
20
1
0.3
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
500
100
Limited by r_DS(on)
10
1
T_C = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1 _0.05
0.02
0.01
10^–5
Single Pulse
10^–4
www.vishay.com S FaxBack 408-970-5600
2-4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70289
S-05111—Rev. C, 10-Dec-01