SUP65P06-20 Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET

SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (W)
–60
0.020
I_D (A)
–65^a
TO-220AB
S
DRAIN connected to TAB
GD S
Top View
SUP65P06-20
TO-263
G DS
Top View
SUB65P06-20
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Avalanche Current
Repetitive Avalanche Energy^b
L = 0.1 mH
Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 125_C (TO-263)^c
Operating Junction and Storage Temperature Range
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
"20
–65^a
–39
–200
–60
180
250^d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
PCB Mount (TO-263)^c
Free Air (TO-220AB)
R_thJA
R_thJA
Junction-to-Case
R_thJC
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
Limit
40
62.5
0.6
Unit
_C/W
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