SUP65P06-20 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET

SUP/SUB65P06-20
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –60 V, V_GS = 0 V
V_DS = –60 V, V_GS = 0 V, T_J = 125_C
V_DS = –60 V, V_GS = 0 V, T_J = 175_C
V_DS = –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –30 A
V_GS = –10 V, I_D = –30 A, T_J = 125_C
V_GS = –10 V, I_D = –30 A, T_J = 175_C
V_DS = –15 V, I_D = –30 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = –25 V, f = 1 MHz
V_DS = –30 V, V_GS = –10 V, I_D = –65 A
V_DD = –30 V, R_L = 0.47 W
I_D ] –65 A, V_GEN = –10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = –65 A, V_GS = 0 V
I_F = –65 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
Min Typ Max Unit
–60
V
–2.0
–3.0
–4.0
"100
nA
–1
–50
mA
–150
–120
A
0.017 0.020
0.033
W
0.042
25
S
4500
870
pF
350
85
120
24
nC
22
15
40
40
80
ns
65
120
30
60
–65
A
–200
–1.1
–1.4
V
70
120
ns
7
9
A
0.245 0.54
mC
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Document Number: 70289
S-05111—Rev. C, 10-Dec-01