SUP60N06-18 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET

SUP/SUB60N06-18
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
V_GS = 10 V
2.0
I_D = 30 A
1.6
1.2
10
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.8
0.4
0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
70
60
50
40
30
20
10
1
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
200
100
Limited
by r_DS(on)
10
1
T_C = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0 20 40 60 80 100 120 140 160 180
T_C – Case Temperature (_C)
0.1
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10^–5
Single Pulse
0.05
0.02
10^–4
10^–3
10^–2
Square Wave Pulse Duration (sec)
www.vishay.com S FaxBack 408-970-5600
2-4
10^–1
1
3
Document Number: 70290
S–57253—Rev. D, 24-Feb-98