SUP60N06-18 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET

SUP/SUB60N06-18
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
V_GS = 10, 9, 8, 7 V
75
6V
50
25
0
0
70
60
50
40
30
20
10
0
0
3000
5V
4V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
T_C = –55_C
25_C
125_C
10
20
30
40
50
V_GS – Gate-to-Source Voltage (V)
Capacitance
Transfer Characteristics
100
80
60
40
20
0
0
T_C = 125_C
25_C
–55_C
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
0.016
0.012
V_GS = 10 V
0.008
0.004
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
10
2500
C_iss
2000
1500
1000
500
C_rss
C_oss
8
V_GS = 10 V
I_D = 60 A
6
4
2
0
0
10
20
30
40
V_DS – Drain-to-Source Voltage (V)
0
0
10
20
30
40
Q_g – Total Gate Charge (nC)
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3