SUP60N06-18 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET

SUP/SUB60N06-18
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_DS = 1 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 125_C
V_DS = 60 V, V_GS = 0 V, T_J = 175_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
C_iss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 60 A
V_DD = 30 V, R_L = 0.5 W
I_D ] 60 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 60 A, V_GS = 0 V
I_F = 60 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
60
V
2.0
4.0
"100
nA
1
50
mA
150
60
A
0.014 0.018
0.024 0.030
W
0.031 0.036
49
S
2000
400
pF
115
39
60
12
nC
10
12
30
11
30
ns
25
50
15
30
60
A
120
1.6
V
60
ns
6.0
A
0.4
mC
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2-2
Document Number: 70290
S–57253—Rev. D, 24-Feb-98