SUP40N10-35 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 105-V (D-S) 175C MOSFET

SUP40N10-35
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 15 A
2.0
Source-Drain Diode Forward Voltage
100
1.5
10
T_J = 150_C
T_J = 25_C
1.0
0.5
0.0
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
10
I_AV (A) @ T_A = 25_C
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain-Source Breakdown Voltage vs.
Junction Temperature
140
I_D = 10 mA
135
130
125
120
115
110
105
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 72797
S-40445—Rev. A, 15-Mar-04