SUP40N10-35 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 105-V (D-S) 175C MOSFET

New Product
SUP40N10-35
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
75
75
V_GS = 10 thru 6 V
60
60
Transfer Characteristics
45
5V
30
15
0
0
4V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transconductance
100
T_C = −55_C
80
25_C
60
125_C
40
20
45
30
15
0
0
0.08
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06
0.04
0.02
V_GS = 6 V
V_GS = 10 V
0
0
3000
2400
1800
15
30
45
60
75
I_D − Drain Current (A)
Capacitance
C_iss
0.00
0
20
15
30
45
60
75
I_D − Drain Current (A)
Gate Charge
16
V_DS = 50 V
I_D = 40 A
12
1200
8
600
0
0
C_rss
C_oss
20
40
60
80
100
V_DS − Drain-to-Source Voltage (V)
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
4
0
0
10 20 30 40 50 60 70
Q_g − Total Gate Charge (nC)
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