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SUP40N10-35 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 105-V (D-S) 175C MOSFET
New Product
SUP40N10-35
Vishay Siliconix
N-Channel 105-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
105
rDS(on) (W)
0.035 @ VGS = 10 V
0.038 @ VGS = 6 V
TO-220AB
ID (A)
37.5
36.0
D
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
APPLICATIONS
D Automotive
− Motor Drives
− 12-V Systems
D Note Book PC adaptors
G
GD S
Top View
Ordering Information: SUP40N10-35—E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cc
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
105
"20
37.5
21.5
75
35
61
107b
3.75
−55 to 175
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case (Drain)
Parameter
PCB Mountc
Free Air
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
Symbol
RthJA
RthJC
Limit
40
62.5
1.4
Unit
V
A
mJ
W
_C
Unit
_C/W
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