SUP40N06-25L Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level

SUP/SUB40N06-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 20 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Drain Current vs. Case Temperature
50
40
30
20
10
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
200
100
Limited
by r_DS(on)
10
1
T_C = 25_C
Single Pulse
100 ms
1 ms
10 ms
100 ms
dc, 1 s
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.01
10^–5
Single Pulse
0.02
10^–4
www.vishay.com S FaxBack 408-970-5600
2-4
10^–3
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70288
S-57253—Rev. C, 24-Feb-98