SUP40N06-25L Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level

SUP/SUB40N06-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
60
6V
V_GS = 10, 9, 8, 7 V
5V
80
45
60
4V
30
40
15
20
3V
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
70
T_C = –55_C
60
50
25_C
40
125_C
30
0
0
0.04
0.03
0.02
20
0.01
10
0
0
0
10
20
30
40
50
60
0
I_D – Drain Current (A)
Capacitance
3000
10
Transfer Characteristics
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
10
20
30
40
50
60
I_D – Drain Current (A)
Gate Charge
2500
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
15
30
45
60
V_DS – Drain-to-Source Voltage (V)
8
V_DS = 30 V
I_D = 40 A
6
4
2
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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