SUP40N06-25L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level

SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V_(BR)DSS (V)
60
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.025 @ V_GS = 4.5 V
I_D (A)
40
40
TO-220AB
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP40N06-25L
G DS
Top View
SUB40N06-25L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 100_C
Avalanche Current
Repetitive Avalanche Energy^a
L = 0.1 mH
Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^c
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
60
"20
40
25
100
40
80
90^c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t v 10 sec.
PCB Mount (TO-263)^c
Free Air (TO-220AB)
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
Symbol
R_thJA
R_thJC
Limit
40
80
1.6
Unit
_C/W
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