SUM60N04-06T Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode

SUM60N04-06T
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
I_D = 25 A
1.6
Source-Drain Diode Forward Voltage
1.2
T_J = 150_C
10
0.8
T_J = 25_C
0.4
0.0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Avalanche Current vs. Time
1000
100
I_AV (A) @ T_A = 150_C
10
I_AV (A) @ T_A = 25_C
1
1
0
0.2
0.4
0.6 0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
55
I_D = 250 mA
52
49
46
43
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (Sec)
Sense Diode Forward Voltage vs. Temperature
1.0
40
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Sense Diode Forward Voltage
0.01
0.8
I_D = 50 mA
0.6
I_D = 25 mA
0.4
0.2
0.001
0.0001
T_J = 150_C
0.00001
T_J = 25_C
0.0
0
25
50
75
100 125 150
T_J – Junction Temperature (_C)
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4
0.000001
0
0.25 0.5
0.75 1.0
V_F (V)
1.25 1.5
Document Number: 71746
S-05062—Rev. A, 12-Nov-01