SUM60N04-06T Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode

New Product
SUM60N04-06T
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
200
V_GS = 10 thru 6 V
150
150
5V
Transfer Characteristics
100
50
0
0
200
160
120
80
40
4V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
T_C = –55_C
25_C
125_C
100
50
0
0
0.008
T_C = 125_C
25_C
–55_C
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.006
0.004
V_GS = 10 V
0.002
0
0
10000
20
40
60
80
100 120
V_GS – Gate-to-Source Voltage (V)
Capacitance
8000
C_iss
6000
0.000
0
20
20
40
60
80
100 120
I_D – Drain Current (A)
Gate Charge
16
V_GS = 20 V
I_D = 25 A
12
4000
2000
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
8
4
0
0
50
100
150
200
Q_g – Total Gate Charge (nC)
www.vishay.com
3