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SUM60N04-06T Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode
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SUM60N04-06T
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Gate Threshold Voltage
VGS(th)
VDS = VGS, IDS = 250 mA
2
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductancea
IDSS
ID(on)
rDS(on)
VFD1
VFD2
DVF
gfs
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 125_C
VDS = 32 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
120
VGS = 10 V, ID = 25 A
VGS = 10 V, ID = 25 A, TJ = 125_C
VGS = 10 V, ID = 25 A, TJ = 175_C
IF = 50 mA
655
IF = 25 mA
600
From IF = 25 mA to IF = 50 mA
30
VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 25 A
VDD = 20 V, RL = 0.8 W
ID ] 25 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 60 A, VGS = 0 V
IF = 60 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
V
"100
nA
1
50
mA
500
A
0.0044 0.0055
0.0088
W
0.011
715
660
mV
80
35
S
6400
1100
pF
630
115
150
35
nC
35
15
20
150
210
ns
60
85
80
110
60
A
200
1.0
1.5
V
45
70
ns
2.5
5
A
0.06
0.18
mC
www.vishay.com
2
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
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