SUM60030E Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
1.95
100
SUM60030E
Vishay Siliconix
1.70
1.45
1.20
0.95
V_GS = 10 V, I_D =30 A
V_GS = 7.5 V
I_D =30 A
T_J = 150 °C
10
1
T_J = 25 °C
0.70
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.010
0.008
I_D = 30 A
0.006
0.004
0.002
T_J = 25 °C
T_J = 125 °C
0
3
4.5
6
7.5
9
V_GS - Gate -to -Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.5
I_D = 250 μA
3.1
2.7
2.3
1.9
1.5
1.1
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
300
I_D = 250 μA
250
97
200
94
150
91
100
88
50
85
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Current De-rating
S15-1869-Rev. A, 10-Aug-15
4
Document Number: 67984
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