SUM60030E Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
250
100
V_GS = 10 V thru 6 V
200
80
SUM60030E
Vishay Siliconix
T_C = 25 °C
150
100
50
0
0
V_GS = 5 V
V_GS = 4 V
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
60
40
20
0
0
T_C = 125 °C
T_C = - 55 °C
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
120
T_C = 25 °C
90
T_C = - 55 °C
60
T_C = 125 °C
30
0
0
6
12
18
24
30
I_D - Drain Current (A)
Transconductance
0.0040
0.0035
0.0030
0.0025
0.0020
V_GS =7.5 V
V_GS = 10 V
0.0015
0.0010
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
11000
8800
6600
4400
C_iss
C_oss
10
I_D = 20 A
8
6
4
V_DS = 20 V
V_DS = 40 V
V_DS = 64 V
2200
2
C_rss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Capacitance
Gate Charge
S15-1869-Rev. A, 10-Aug-15
3
Document Number: 67984
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000