SUM60030E Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET

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SUM60030E
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) MAX.
0.0032 at V_GS = 10 V
80
0.0034 at V_GS = 7.5 V
I_D (A) ^d
120
120
Q_g (TYP.)
94
TO-263
Top View
S
D
G
Ordering Information:
SUM60030E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• Maximum 175 °C junction temperature
• Very low Q_gd reduces power loss from passing
through V_plateau
• 100 % R_g and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
• ORing / e-fuse
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
I_D
T_C = 70 °C
Pulsed Drain Current (t = 100 μs)
I_DM
Avalanche Current
Single Avalanche Energy ^a
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^a
T_C = 25 °C
P_D
T_C = 125 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
80
± 20
120 ^d
120 ^d
250
70
245
375 ^b
125 ^b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) ^c
Junction-to-Case (Drain)
Notes
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
R_thJA
R_thJC
LIMIT
40
0.4
UNIT
°C/W
S15-1869-Rev. A, 10-Aug-15
1
Document Number: 67984
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000