SUM40N02-12P Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET

SUM40N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
100
V_GS = 10 V
I_D = 20 A
1.6
Source-Drain Diode Forward Voltage
1.4
T_J = 150_C
10
1.2
T_J = 25_C
1.0
0.8
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
30
28
I_D = 250 mA
26
24
22
20
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
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4
Document Number: 72111
S-42351—Rev. D, 20-Dec-04