SUM40N02-12P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET

SUM40N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
20
r_DS(on) (W)
0.012 @ V_GS = 10 V
0.026 @ V_GS = 4.5 V
I_D (A)^a
40^a
40^a
Q_g (Typ)
7.5
TO-263
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for High-Side Synchronous Rectifier
D 100% R_g Tested
APPLICATIONS
D Desktop or Server CPU Core
D Game Station
D
G DS
Top View
DRAIN connected to TAB
Ordering Information: SUM40N02-12P
SUM40N02-12P—E3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_A = 25_C ^d
I_D
I_DM
P_D
T_J, T_stg
40^a
40^a
90
83^c
3.75
−55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mounted)^d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
1.8
Unit
_C/W
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
www.vishay.com
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