SUM16N20-125 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUM16N20-125
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.2
2.8
V_GS = 10 V
I_D = 15 A
2.4
2.0
1.6
1.2
0.8
0.4
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
250
240
I_D = 1.0 mA
230
220
210
200
190
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 72076
S-31273—Rev. C, 16-Jun-03