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| SUM16N20-125 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET | |||
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SUM16N20-125
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125_C
VDS = 160 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A, TJ = 125_C
VGS = 10 V, ID = 15 A, TJ = 175_C
VGS = 6 V, ID = 10 A
VDS = 15 V, ID = 25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 100 V, VGS = 10 V, ID = 25 A
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
RG
td(on)
tr
td(off)
tf
VDD = 100 V, RL = 4 W
ID ^ 25 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 25 A, VGS = 0 V
IF = 25 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
200
V
2
4
"100
nA
1
50
mA
250
25
A
0.100
0.125
0.268
W
0.388
0.100
0.150
10
S
1330
140
pF
58
24
36
9
nC
9
4.0
W
10
15
175
260
ns
25
40
110
165
16
A
25
1.0
1.5
V
105
160
ns
7
11
A
0.37
0.88
mC
www.vishay.com
2
Document Number: 72076
S-31273âRev. C, 16-Jun-03
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