SUM16N20-125 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

New Product
SUM16N20-125
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
200
r_DS(on) (W)
0.125 @ V_GS = 10 V
0.150 @ V_GS = 6 V
I_D (A)
16
14.6
D
TO-263
G DS
Top View
SUM16N20-125
G
S
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D PWM Optimized for Fast Switching
APPLICATIONS
D Automotive
- 42-V EPS and ABS
- DC/DC Conversion
- Motor Drives
D Isolated DC/DC converters
- Primary-Side Switch
- High Voltage Synchronous Rectifier
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
200
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C^c
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
16
9.2
25
10
5
100^b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72076
S-31273—Rev. C, 16-Jun-03
Symbol
R_thJA
R_thJC
Limit
40
1.5
Unit
_C/W
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