SUM110N03 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUM110N03-03
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
100
V_GS = 10 V
I_D = 30 A
1.5
1.2
10
0.9
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
100
I_AV (A) @ T_A = 25_C
10
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
40
38
I_D = 1 mA
36
34
32
30
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 72260
S-31257—Rev. A, 16-Jun-03