SUM110N03 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUM110N03-03
Vishay Siliconix
New Product
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 125_C
V_DS = 24 V, V_GS = 0 V, T_J = 175_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^b
Gate-Source Charge^b
Gate-Drain Charge^b
Turn-On Delay Time^b
Rise Time^b
Turn-Off Delay Time^b
Fall Time^b
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 110 A
V_DD = 15 V, R_L = 0.18 W
I_D ^ 110 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^c
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_S
I_SM
V_SD
I_F = 50 A, V_GS = 0 V
t_rr
I_RM
I_F = 50 A, di/dt = 100 A/ms
Q_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
30
V
2.5
4.5
"100
nA
1
50
mA
250
120
A
0.002
0.0025
0.0037
W
0.0044
15
S
12500
1650
pF
970
170
250
57
nC
30
20
35
125
190
ns
70
105
25
40
110
A
350
0.9
1.5
V
70
140
ns
3
4.5
A
0.1
0.31
mC
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2
Document Number: 72260
S-31257—Rev. A, 16-Jun-03