SUM110N03 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUM110N03-03
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
30
r_DS(on) (W)
0.0025 @ V_GS = 10 V
TO-263
G DS
Top View
DRAIN connected to TAB
Ordering Information: SUM110N03-03
I_D (A)^a
110^a
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Low Thermal Resistance Package
D High Threshold Voltage
APPLICATIONS
D Automotive 12-V Boardnet
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C ^d
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
110^a
110^a
350
70
245
242^c
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
0.62
Unit
_C/W
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
www.vishay.com
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