SUD50P06-15L Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET

SUD50P06-15L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
1.8
I_D = 17 A
Source-Drain Diode Forward Voltage
1.6
1.4
T_J = 150_C
T_J = 25_C
10
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
60
50
40
30
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
100.00
Safe Operating Area
r_DS(on) Limited
I_D(on)
Limited
10.00
I_DM Limited
P(t) = 0.0001
20
T_C = 25_C
10
Single Pulse
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (_C)
1.00
0.1
BV_DSS Limited
1.0
10.0
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
100.0
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
www.vishay.com
4
10 ^{- 2}
Square Wave Pulse Duration (sec)
10 ^{- 1}
1
Document Number: 72250
S-31673—Rev. B 11-Aug-03