SUD50P06-15L Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET

SUD50P06-15L
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 mA
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = - 48 V, V_GS = 0 V
V_DS = - 48 V, V_GS = 0 V, T_J = 125_C
V_DS = - 48 V, V_GS = 0 V, T_J = 175_C
V_DS = - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 17 A
V_GS = - 10 V, I_D = - 50 A, T_J = 125_C
V_GS = - 10 V, I_D = - 50 A, T_J = 175_C
V_GS = - 4.5 V, I_D = - 14 A
V_DS = - 15 V, I_D = - 17 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = - 25 V, f = 1 MHz
V_DS = - 30 V, V_GS = - 10 V, I_D = - 50 A
V_DD = - 30 V, R_L = 0.6 W
I_D ] - 50 A, V_GEN = - 10 V, R_G = 6 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
I_s
I_SM
V_SD
I_F = - 50 A, V_GS = 0 V
t_rr
I_F = - 50 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
- 60
V
-1
-3
"100
nA
-1
- 50
mA
- 150
- 50
A
0.012 0.015
0.025
W
0.030
0.020
61
S
4950
480
pF
405
110
165
19
nC
28
15
23
70
105
ns
175
260
175
260
- 50
A
- 80
1.0
1.6
V
45
70
ns
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2
Document Number: 72250
S-31673—Rev. B 11-Aug-03