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SUD50P06-15L Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S), 175C MOSFET
New Product
SUD50P06-15L
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.015 @ VGS = - 10 V
- 60
0.020 @ VGS = - 4.5 V
ID (A)
- 50 d
- 50
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automtoive 12-V Boardnet
S
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P06-15L
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
- 60
"20
- 50d
- 39
- 80
- 50
125
136c
3b, c
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
Document Number: 72250
S-31673—Rev. B 11-Aug-03
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
_C/W
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