SUD50N04-07L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 Degree Celcious MOSFET

SUD50N04-07L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
I_D = 20 A
1.7
1.4
10
1.1
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.8
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Case Temperature
80
70
60
1
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Safe Operating Area
200 Limited by r_DS(on)
100
10 ms
100 ms
50
40
Limited By Package
30
20
10
10
1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (_C)
0.1
0.1
1
10
50
V_DS - Drain-to-Source Voltage (V)
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1 ^0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
100
1K
Document Number: 72344
S-32079—Rev. B, 13-Oct-03