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| SUD50N04-07L Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 Degree Celcious MOSFET | |||
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SUD50N04-07L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 125_C
VDS = 32 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 50 A
VDD = 20 V, RL = 0.4 W
ID ] 50 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Is
ISM
VSD
IF = 30 A, VGS = 0 V
trr
IF = 30 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
40
V
1
3
"100
nA
1
50
mA
150
65
A
0.006 0.0074
0.012
W
0.015
0.0085 0.011
20
57
S
2800
320
pF
190
50
75
10
nC
10
2.0
W
11
20
20
30
ns
40
60
15
25
43
A
100
0.90
1.50
V
30
45
ns
www.vishay.com
2
Document Number: 72344
S-32079âRev. B, 13-Oct-03
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