SUD50N04-07L Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175 Degree Celcious MOSFET

New Product
SUD50N04-07L
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
40
r_DS(on) (W)
0.0074 @ V_GS = 10 V
0.011 @ V_GS = 4.5 V
I_D (A)^c
65
54
TO-252
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D Low Threshold
APPLICATIONS
D Motor Control
D Automotive
- 12-V Boardnet
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N04-07L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
40
"20
65^c
46^c
100
40
80
65
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient^b
t v 10 sec
Steady State
R_thJA
Junction-to-Case
R_thJC
Notes:
a. Duty cycle v 1%.
b. Surface mounted on 1” FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72344
S-32079—Rev. B, 13-Oct-03
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
_C/W
www.vishay.com
1